Michiyasu MORI, Masao OGATA (Univ. Tokyo) and Hidetoshi FUKUYAMA (Univ. Tokyo)
[J. Phys. Soc. Jpn. 66, 11 (1997)]
The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as g=2e2/h and there is no renormalization by Umklapp scattering process. At finite temperatures, however, the quantization is affected depending on the gate voltage and temperature.