Y. PARK, S. RHEE (Pohang Univ. Sci. Tech.), Y. IMAIZUMI and T. URISU
[J. Appl. Phys. 80, 1236 (1996)]
Effects of synchrotron radiation (SR) on silicon oxide films, deposited with remote plasma-enhanced chemical vapor deposition, has been investigated. SR irradiation had an effect on the silicon dioxide structure which was confirmed by in situ infrared reflection absorption spectroscopy. As the substrate temperature was increased to 373 K, the SiO2 structure become loose by irradiation led to the increase of surface roughness and also the formation of hemispherical bubbles on the film surface, which was confirmed by atomic force microscope. Generation of oxygen-related paramagnetic defect was observed by electron spin resonance.