Kazuhiko SEKIa, Hisao ISHII, Akira YUYAMAa, M.WATANABEb, K.FUKUIc, E.ISHIGUROd, J.YAMAZAKI, S.HASEGAWA, K.HORIUCHIe, T. OHTAf, H.ISAKAg, M.FUJINOg, M.FUJIKIg, K.FURUKAWAg and N.MATSUMOTOg (aNagoya Univ., bTohoku Univ., cFukui Univ., dUniv. Ryukyus, eHiroshima Univ., fUniv. Tokyo and gNTT)
[J. Electron Spectrosc. Relat. Phenom. 78, 403 (1996); Mol. Cryst. Liq. Cryst. 285, 205(1996)]
UPS and Si K- and LII,III-edge NEXAFS spectra of various polysilanes, poly(dimethylsiloxane), and octakis(t-butyl)octa-silacubane(OTBOSC) were measured for elucidating their occupied and vacant electronic structures, in comparison with the results for polysilazane. The results revealed that the electronic structures are sensitive for the main chain structure, pendant, and the dimensionality of the Si-containing backbone.