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2013/08/23

Press Release

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.

Paper Reference:
Journal: Nature Communications

Title of the paper: A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

Authors: Hiroshi M. Yamamoto, Masaki Nakano, Masayuki Suda, Yoshihiro Iwasa, Masashi Kawasaki, and Reizo Kato

Date: Published online 23 August 2013 doi:10.1038/ncomms3379

Hiroshi M. Yamamoto
Professor, Institute for Molecular Science
Home page: http://yamamoto-tokyo.jp/ims/english/

　　　　　　　

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